Skip to Content

flowBOOST 1 dual SiC

10-FY12B2A032ME-L387L28

Topology Housing Voltage R(DS)on Main chip technology Product status
Booster flow 1 1200 V 32 mOhm SiC MOSFET Series
Placeholder image
Placeholder image

Product description

Basic information

  • Product line: flowBOOST 1 dual SiC
  • Product status: Series
  • Standard packaging quantity (pieces): 100

Electrical characteristics

  • Voltage: 1200 V
  • Current: 35 A
  • R(DS)on: 32 mOhm

    Booster

  • Kelvin Emitter for improved switching performance
  • Dual Booster
  • Bypass Diode
  • Integrated DC capacitor
  • Temperature sensor

Chip & isolation characteristics

    SiC MOSFET

  • High Blocking Voltage with low drain source on state resistance
  • High speed SiC-MOSFET technology
  • Resistant to Latch-up

    Isolation

  • Base isolation: Al2O3

Mechanical & housing characteristics

    flow 1

  • Mechanical connection to PCB: 4 towers
  • Footprint: 82 mm x 37.4 mm
  • Height: 12 mm
  • Pin type: Solder pin

Thermal documents

Handling instruction phase-change material
Download (PDF)
Protection of TIM – ProCap
Download (PDF)

Mechanical documents

Handling instruction
Download (PDF)
Housing dimensions
Download (PDF)
3D module outline
Download (STP)

Other documents

RoHS statement
Download (PDF)
REACH statement
Download (PDF)
UL certificate
Download (PDF)
Technical Explanation of Datasheet
Download (PDF)
Product Qualification at Vincotech
Download (PDF)
10-FY12B2A032ME-L387L2810-FY12B2A032ME-L387L28
contact