flowANPC E3 SiC
B0-EP12NAA004MS-PS38F78T
拓扑结构 封装 电压 导通电阻 主芯片技术 产品状态
Three-level ANPC flow E3 1200 V 4.25 mOhm SiC MOSFET Engineering Sample


产品描述
基本信息
- 产品线: flowANPC E3 SiC
- 产品状态: Engineering Sample
- 标准包装数量: 40
电气特性
- 电压: 1200 V
- 电流: 300 A
- R(DS)on: 4.25 mOhm
- Advanced Neutral Point Clamped topology
- IGBT
- Kelvin Emitter for improved switching performance
- MOSFET
- Temperature sensor
Three-level ANPC
芯片与隔离特性
- High Blocking Voltage with low drain source on state resistance
- High speed SiC-MOSFET technology
- Resistant to Latch-up
SiC MOSFET
- 基础隔离: Al2O3
隔离
机械与封装特性
- PCB机械连接方式: 4 towers
- 封装尺寸: 109.9 mm x 62 mm
- 高度: 12 mm
- 引脚类型: Press-fit pin
flow E3