flowDUAL E3BP SiC
30-EP12SAA001MS-PT59F77T
Topology Housing Voltage R(DS)on Main chip technology Product status


Product description
Basic information
- Product line: flowDUAL E3BP SiC
- Product status: Engineering Sample
- Standard packaging quantity (pieces): 24
Electrical characteristics
- Voltage: 1200 V
- Current: 1020 A
- R(DS)on: 1.4 mOhm
- Common emitter point Half Bridge
- SiC MOSFET
- Temperature sensor
Half-Bridge
Chip & isolation characteristics
- High Blocking Voltage with low drain source on state resistance
- High speed SiC-MOSFET technology
- Resistant to Latch-up
SiC MOSFET
- Base isolation: Al2O3
Isolation
Mechanical & housing characteristics
- Mechanical connection to PCB: 4 towers
- Footprint: 109.6 mm x 59.7 mm
- Height: 12 mm
- Pin type: Press-fit pin
flow E3BP