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flowBOOST 1 dual SiC

10-FY12B2A040MR-L387L68

Topology Housing Voltage R(DS)on Main chip technology Product status
Booster flow 1 1200 V 40 mOhm SiC MOSFET Series
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Product description

Basic information

  • Product line: flowBOOST 1 dual SiC
  • Product status: Series
  • Standard packaging quantity (pieces): 100

Electrical characteristics

  • Voltage: 1200 V
  • Current: 35 A
  • R(DS)on: 40 mOhm

    Booster

  • Kelvin Emitter for improved switching performance
  • Dual Booster
  • Bypass Diode
  • Integrated DC capacitor
  • Temperature sensor

Chip & isolation characteristics

    SiC MOSFET

  • Easy paralleling
  • Low on-resistance
  • Fast switching speed
  • Fast recovery body diode

    Isolation

  • Base isolation: Al2O3

Mechanical & housing characteristics

    flow 1

  • Mechanical connection to PCB: 4 towers
  • Footprint: 82 mm x 37.4 mm
  • Height: 12 mm
  • Pin type: Solder pin

Thermal documents

Handling instruction phase-change material
Download (PDF)
Protection of TIM – ProCap
Download (PDF)

Mechanical documents

Handling instruction
Download (PDF)
Housing dimensions
Download (PDF)
3D module outline
Download (STP)

Other documents

RoHS statement
Download (PDF)
REACH statement
Download (PDF)
UL certificate
Download (PDF)
Technical Explanation of Datasheet
Download (PDF)
Product Qualification at Vincotech
Download (PDF)
10-FY12B2A040MR-L387L6810-FY12B2A040MR-L387L68
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