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fastPACK E2 SiC

10-EY124PA026ME-LP48F08T

Topology Housing Voltage R(DS)on Main chip technology Product status
H-Bridge flow E2 1200 V 26 mOhm SiC MOSFET Series
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Product description

Basic information

  • Product line: fastPACK E2 SiC
  • Product status: Series
  • Standard packaging quantity (pieces): 0

Electrical characteristics

  • Voltage: 1200 V
  • Current: 55 A
  • R(DS)on: 26 mOhm

    H-Bridge

  • Kelvin Emitter for improved switching performance
  • Open Emitter configuration
  • Temperature sensor

Chip & isolation characteristics

    SiC MOSFET

  • Fast intrinsic diode with low reverse recovery
  • High blocking voltage with low on-resistance
  • High speed switching with low capacitance

    Isolation

  • Base isolation: Al2O3

Mechanical & housing characteristics

    flow E2

  • Mechanical connection to PCB: 4 towers
  • Footprint: 62.8 mm x 57.7 mm
  • Height: 12 mm
  • Pin type: Press-fit pin

Thermal documents

PSX-P7 TIM thickness
  • Minimum: 45 um
  • Maximum: 75 um
  • Stencil thickness: 70 um
TIM pattern
Download (PDF) Download (DXF)
PTM6000HV TIM thickness
  • Minimum: 45 um
  • Maximum: 75 um
  • Stencil thickness: 70 um
TIM pattern
Download (PDF) Download (DXF)

Mechanical documents

Handling instruction
Download (PDF)
3D module outline
Download (STP)
Vincotech press-fit pins
Download (PDF)
Press-out tool
Download (STP)
Press-in tool: Bottom
Download (STP)
Press-in tool: Flat with TIM
Download (STP)
Press-in tool: U-shape with TIM
Download (STP)

Other documents

RoHS statement
Download (PDF)
REACH statement
Download (PDF)
UL certificate
Download (PDF)
Technical Explanation of Datasheet
Download (PDF)
Product Qualification at Vincotech
Download (PDF)
10-EY124PA026ME-LP48F08T
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