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fastPACK E2 SiC

10-EY124PA016ME01-LP49F16T

Topology Housing Voltage R(DS)on Main chip technology Product status
H-Bridge flow E2 1200 V 16 mOhm SiC MOSFET Engineering Sample
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Product description

Basic information

  • Product line: fastPACK E2 SiC
  • Product status: Engineering Sample
  • Standard packaging quantity (pieces): 100

Electrical characteristics

  • Voltage: 1200 V
  • Current: 80 A
  • R(DS)on: 16 mOhm

    H-Bridge

  • Kelvin Emitter for improved switching performance
  • Open Emitter configuration
  • Temperature sensor

Chip & isolation characteristics

    SiC MOSFET

  • High Blocking Voltage with low drain source on state resistance
  • High speed SiC-MOSFET technology
  • Resistant to Latch-up

    Isolation

  • Base isolation: AlN

Mechanical & housing characteristics

    flow E2

  • Mechanical connection to PCB: 4 towers
  • Footprint: 62.8 mm x 57.7 mm
  • Height: 12 mm
  • Pin type: Press-fit pin

Mechanical documents

Handling instruction
Download (PDF)
Housing dimensions
Download (PDF)
3D module outline
Download (STP)
Vincotech press-fit pins
App note not yet available, will be added later.

Other documents

RoHS statement
Download (PDF)
REACH statement
Download (PDF)
UL certificate
Download (PDF)
Technical Explanation of Datasheet
Download (PDF)
Product Qualification at Vincotech
Download (PDF)
10-EY124PA016ME01-LP49F16T10-EY124PA016ME01-LP49F16T
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