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flowNPFC E2 SiC

10-EY07LBB011ME-PQ84J18T

Topology Housing Voltage R(DS)on Main chip technology Product status
PFC (Three-phase applications) flow E2 650 V 11 mOhm SiC MOSFET Engineering Sample
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Product description

Basic information

  • Product line: flowNPFC E2 SiC
  • Product status: Engineering Sample
  • Standard packaging quantity (pieces): 100

Electrical characteristics

  • Voltage: 650 V
  • Current: 90 A
  • R(DS)on: 11 mOhm

    PFC (Three-phase applications)

  • Kelvin Emitter for improved switching performance
  • Integrated DC capacitor
  • Temperature sensor
  • Low inductive commutation loop
  • Neutral Boost PFC
  • SiC MOSFET
  • Integrated Resistor for improved dynamic behavior

Chip & isolation characteristics

    SiC MOSFET

  • High Blocking Voltage with low drain source on state resistance
  • High speed SiC-MOSFET technology
  • Resistant to Latch-up

    Isolation

  • Base isolation: Al2O3

Mechanical & housing characteristics

    flow E2

  • Mechanical connection to PCB: 4 towers
  • Footprint: 62.8 mm x 57.7 mm
  • Height: 12 mm
  • Pin type: Press-fit pin

Thermal documents

Handling instruction phase-change material
Download (PDF)

Mechanical documents

Handling instruction
Download (PDF)
Housing dimensions
Download (PDF)
3D module outline
Download (STP)
Vincotech press-fit pins
Download (PDF)
Press-out tool
Download (STP)
Press-in tool: Bottom
Download (STP)
Press-in tool: Flat with TIM
Download (STP)
flowE2-12U-TIM_V02
Download (STP)

Other documents

RoHS statement
Download (PDF)
REACH statement
Download (PDF)
UL certificate
Download (PDF)
Technical Explanation of Datasheet
Download (PDF)
Product Qualification at Vincotech
Download (PDF)
10-EY07LBB011ME-PQ84J18T10-EY07LBB011ME-PQ84J18T
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